Methods utilizing scanning probe microscope tips and products therefor or produced thereby

ABSTRACT

The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN and kits for performing DPN. 
     The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.

This application is a continuation of application Ser. No. 09/477,997,filed Jan. 5, 2000, now U.S. Pat. No. 6,635,311, which claims benefit ofprovisional application 60/115,133, filed Jan. 7, 1999, and provisionalapplication 60/157,633, filed Oct. 4, 1999, the complete disclosures ofwhich are incorporated herein by reference.

This invention was made with government support under grantF49620-96-1-055 from the Air Force Office Of Science Research. Thegovernment has rights in the invention.

FIELD OF THE INVENTION

This invention relates to methods of microfabrication andnanofabrication. The invention also relates to methods of performingatomic force microscope imaging.

BACKGROUND OF THE INVENTION

Lithographic methods are at the heart of modern day microfabrication,nanotechnology and molecular electronics. These methods often rely onpatterning a resistive film, followed by a chemical etch of thesubstrate.

Dip pen technology, where ink on a sharp object is transported to apaper substrate by capillary forces, is approximately 4000 years old.Ewing, The Fountain Pen: A Collector's Companion (Running Press BookPublishers, Philadelphia, 1997). It has been used extensively throughouthistory to transport molecules on macroscale dimensions.

By the present invention, these two related but, with regard to scaleand transport mechanism, disparate concepts have been merged to create“dip pen” nanolithography (DPN). DPN utilizes a scanning probemicroscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a“nib” or “pen,” a solid-state substrate (e.g., gold) as “paper,” andmolecules with a chemical affinity for the solid-state substrate as“ink.” Capillary transport of molecules from the tip to the solidsubstrate is used in DPN to directly write patterns consisting of arelatively small collection of molecules in submicrometer dimensions.

DPN is not the only lithographic method that allows one to directlytransport molecules to substrates of interest in a positive printingmode. For example, microcontact printing, which uses an elastomer stamp,can deposit patterns of thiol-functionalized molecules directly ontogold substrates. Xia et al., Angew. Chem. Int. Ed. Engl., 37:550 (1998);Kim et al., Nature, 376:581 (1995); Xia et al., Science, 273:347 (1996);Yan et al., J. Am. Chem. Soc., 120:6179 (1998); Kumar et al., J. Am.Chem. Soc., 114:9188 (1992). This method is a parallel technique to DPN,allowing one to deposit an entire pattern or series of patterns on asubstrate of interest in one step. This is an advantage over a serialtechnique like DPN, unless one is trying to selectively place differenttypes of molecules at specific sites within a particular type ofnanostructure. In this regard, DPN complements microcontact printing andmany other existing methods of micro- and nanofabrication.

There are also a variety of negative printing techniques that rely onscanning probe instruments, electron beams, or molecular beams topattern substrates using self-assembling monolayers and other organicmaterials as resist layers (i.e., to remove material for subsequentprocessing or adsorption steps). Bottomley, Anal. Chem., 70:425R (1998);Nyffenegger et al., Chem. Rev., 97:1195 (1997); Berggren et al.,Science, 269:1255 (1995); Sondag-Huethorst et al., Appl. Phys. Lett.,64:285 (1994); Schoer et al., Langmuir, 13:2323 (1997); Xu et al.,Langmuir, 13:127 (1997); Perkins et al., Appl. Phys. Lett., 68:550(1996); Carr et al., J. Vac. Sci. Technol. A, 15:1446 (1997); Lercel etal., Appl. Phys. Lett., 68:1504 (1996); Sugimura et al., J. Vac. Sci.Technol. A, 14:1223 (1996); Komeda et al., J. Vac. Sci. Technol. A,16:1680 (1998); Muller et al., J. Vac. Sci. Technol. B, 13:2846 (1995);Kim et al., Science, 257:375 (1992). However, DPN can deliver relativelysmall amounts of a molecular substance to a substrate in ananolithographic fashion that does not rely on a resist, a stamp,complicated processing methods, or sophisticated noncommercialinstrumentation.

A problem that has plagued AFM since its invention is the narrow gapcapillary formed between an AFM tip and sample when an experiment isconducted in air which condenses water from the ambient andsignificantly influences imaging experiments, especially thoseattempting to achieve nanometer or even angstrom resolution. Xu et al.,J. Phys. Chem. B, 102:540 (1998); Binggeli et al., Appl. Phys. Lett,65:415 (1994); Fujihira et al., Chem. Lett., 499 (1996); Piner et al.,Langmuir, 13:6864 (1997). It has been shown that this is a dynamicproblem, and water, depending upon relative humidity and substratewetting properties, will either be transported from the substrate to thetip or vice versa. In the latter case, metastable,nanometer-length-scale patterns, could be formed from very thin layersof water deposited from the AFM tip (Piner et al., Langmuir, 13:6864(1997)). The present invention shows that, when the transportedmolecules can anchor themselves to the substrate, stable surfacestructures are formed, resulting in a new type of nanolithography, DPN.

The present invention also overcomes the problems caused by the watercondensation that occurs when performing AFM. In particular, it has beenfound that the resolution of AFM is improved considerably when the AFMtip is coated with certain hydrophobic compounds prior to performingAFM.

SUMMARY OF THE INVENTION

As noted above, the invention provides a method of lithography referredto as “dip pen” nanolithography, or DPN. DPN is a direct-write,nanolithography technique by which molecules are delivered to asubstrate of interest in a positive printing mode. DPN utilizes a solidsubstrate as the “paper” and a scanning probe microscope (SPM) tip(e.g., an atomic force microscope (AFM) tip) as the “pen”. The tip iscoated with a patterning compound (the “ink”), and the coated tip iscontacted with the substrate so that the patterning compound is appliedto the substrate to produce a desired pattern. The molecules of thepatterning compound are delivered from the tip to the substrate bycapillary transport. DPN is useful in the fabrication of a variety ofmicroscale and nanoscale devices. The invention also provides substratespatterned by DPN and kits for performing DPN.

The invention further provides a method of performing AFM imaging inair. The method comprises coating an AFM tip with a hydrophobiccompound. Then, AFM imaging is performed in air using the coated tip.The hydrophobic compound is selected so that AFM imaging performed usingthe coated AFM tip is improved compared to AFM imaging performed usingan uncoated AFM tip. Finally, the invention provides AFM tips coatedwith the hydrophobic compounds.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1. Schematic representation of “dip pen” nanolithography (DPN). Awater meniscus forms between the atomic force microscope (AFM) tipcoated with 1-octadecanethiol (ODT) and the gold (Au) substrate. Thesize of the meniscus, which is controlled by relative humidity, affectsthe ODT transport rate, the effective tip substrate contact area, andDPN resolution.

FIG. 2A. Lateral force image of a 1 μm by 1 μm square of ODT depositedonto a Au substrate by DPN. This pattern was generated by scanning the 1μm² area at a scan rate of 1 Hz for a period of 10 min at a relativehumidity of 39%. Then the scan size was increased to 3 μm, and the scanrate was increased to 4 Hz while recording the image. The faster scanrate prevents ODT transport.

FIG. 2B. Lattice resolved, lateral force image of an ODT self-assemblingmonolayer (SAM) deposited onto a Au(111)/mica substrate by DPN. Theimage has been filtered with a fast fourier transform (FFT), and the FFTof the raw data is shown in the lower right insert. The monolayer wasgenerated by scanning a 1000 Å square area of the Au(111)/mica substratefive times at a rate of 9 Hz under 39% relative humidity.

FIG. 2C. Lateral force image of 30 nm wide line (3 μm long) depositedonto a Au/mica substrate by DPN. The line was generated by scanning thetip in a vertical line repeatedly for five minutes at a scan rate of 1Hz.

FIG. 2D. Lateral force image of a 100 nm line deposited on a Ausubstrate by DPN. The method of depositing this line is analogous tothat used to generate the image in FIG. 2C, but the writing time was 1.5minutes. Note that in all images (FIGS. 2A-2D), darker regionscorrespond to areas of relatively lower friction.

FIG. 3A. Lateral force image of a Au substrate after an AFM tip, whichhas been coated with ODT, has been in contact with the substrate for 2,4, and 16 min (left to right). The relative humidity was held constantat 45%, and the image was recorded at a scan rate of 4 Hz.

FIG. 3B. Lateral force image of 16-mercaptohexadecanoic acid (MHDA) dotson a Au substrate. To generate the dots, a MHDA-coated AFM tip was heldon the Au substrate for 10, 20, and 40 seconds (left to right). Therelative humidity was 35%. Note that the transport properties of MHDAand ODT differ substantially.

FIG. 3C. Lateral force image of an array of dots generated by DPN. Eachdot was generated by holding an ODT-coated tip in contact with thesurface for ˜20 seconds. Writing and recording conditions were the sameas in FIG. 3A.

FIG. 3D. Lateral force image of a molecule-based grid. Each line, 100 nmin width and 2 μm in length, required 1.5 minutes to write.

FIGS. 4A-B. Oscilloscope recordings of lateral force detector outputbefore the AFM tip was coated with 1-dodecylamine (FIG. 4A) and afterthe tip had been coated with 1-dodecylamine (FIG. 4B). The time of therecording spans four scan lines. Since the signal was recorded duringboth left and right scans, the heights of the square waves are directlyproportional to the friction. The Y-axis zero has been shifted forclarity.

FIGS. 5A-B. Lateral force images showing water transported to a glasssubstrate (dark area) by an unmodified AFM tip (FIG. 5A) and the resultof the same experiment performed with a 1-dodecylamine-coated tip (FIG.5B). Height bars are in arbitrary units.

FIG. 6A. Lattice resolved, lateral force image of a mica surface with a1-dodecylamine-coated tip. The 2D fourier transform is in the insert.

FIG. 6B. Lattice resolved, lateral force image of an self-assembledmonolayer of 11-mercapto-1-undecanol. This image has been fouriertransform filtered (FFT), and the FFT of the raw data is shown in lowerright insert. Scale bars are arbitrary.

FIG. 6C. Topographic image of water condensation on mica at 30% relativehumidity. The height bar is 5 Å.

FIG. 6D. Lateral force image of water condensation on mica at 30%relative humidity (same spot as in FIG. 6C).

FIG. 7A-B. Topographic images of latex spheres, showing no changesbefore and after modifying tip with 1-dodecylamine. Height bars are 0.1μm. FIG. 7A was recorded with a clean tip, and FIG. 7B was recorded withthe same tip coated with 1-dodecylamine.

FIGS. 8A-B. Images of a Si₃N₄ surface coated with 1-dodecylaminemolecules, showing uniform coating. FIG. 8A shows the topography of aSi₃N₄ wafer surface that has been coated with the 1-dodecylaminemolecules, which has similar features as before coating. Height bar is700 Å. FIG. 8B shows the same area recorded in lateral force mode,showing no distinctive friction variation.

FIGS. 9A-C. Schematic diagrams with lateral force microscopy (LFM)images of nanoscale molecular dots showing the “essential factors” fornanometer scale multiple patterning by DPN. Scale bar is 100 nm. FIG. 9Ashows a first pattern of 15 nm diameter 1,16-mercaptohexadecanoic acid(MHA) dots on Au(111) imaged by LFM with the MHA-coated tip used to makethe dots. FIG. 9B shows a second pattern written by DPN using acoordinate for the second pattern calculated based on the LFM image ofthe first pattern shown in FIG. 9A. FIG. 9C shows the final patterncomprising both the first and second patterns. The elapsed time betweenforming the two patterns was 10 minutes.

FIGS. 10A-C. For these figures, scale bar is 100 nm. FIG. 10A shows afirst pattern comprised of 50 nm width lines and alignment marksgenerated with MHA molecules by DPN. FIG. 10B shows a second patterngenerated with ODT molecules. The coordinates of the second pattern wereadjusted based on the LFM image of the MHA alignment pattern. The firstline patterns were not imaged to prevent the possible contamination bythe second molecules. FIG. 10C shows the final results comprisinginterdigitated 50 nm width lines separated by 70 nm.

FIG. 11A. Letters drawn by DPN with MHA molecules on amorphous goldsurface. Scale bar is 100 nm, and the line width is 15 nm.

FIG. 11B. Polygons drawn by DPN with MHA molecules on amorphous goldsurface. ODT molecules were overwritten around the polygons. Scale baris 1 μm, and the line width is 100 nm.

DETAILED DESCRIPTION OF THE PRESENTLY PREFERRED EMBODIMENTS

DPN utilizes a scanning probe microscope (SPM) tip. As used herein, thephrases “scanning probe microscope tip” and “SPM tip” refer to tips usedin atomic scale imaging, including atomic force microscope (AFM) tips,near field scanning optical microscope (NSOM) tips, scanning tunnelingmicroscope (STM) tips, and devices having similar properties. Many SPMtips are available commercially, and similar devices may be developedusing the guidelines provided herein.

Most preferably, the SPM tip is an AFM tip. Any AFM tip can be used.Suitable AFM tips include those that are available commercially from,e.g., Park Scientific, Digital Instruments and Molecular Imaging.

Also preferred are NSOM tips. These tips are hollow, and the patterningcompounds accumulate in the hollows of the NSOM tips which serve asreservoirs of the patterning compound to produce a type of “fountainpen” for use in DPN. Suitable NSOM tips are available from Nanonics Ltd.and Topometrix.

The tip preferably is one to which the patterning compound physisorbsonly. As used herein “physisorb” means that the patterning compoundadheres to the tip surface by a means other than as a result of achemical reaction (i.e., no chemisorption or covalent linkage) and canbe removed from the tip surface with a suitable solvent. Physisorptionof the patterning compounds to the tip can be enhanced by coating thetip with an adhesion layer and by proper choice of solvent (when one isused) for the patterning compound. The adhesion layer is a uniform, thin(<10 nm) layer of material deposited on the tip surface which does notsignificantly change the tip's shape. It should also be strong enough totolerate AFM operation (force of about 10 nN). Titanium and chromiumform very thin uniform layers on tips without changing tip shapesignificantly, and are well-suited to be used to form the adhesionlayer. The tips can be coated with an adhesion layer by vacuumdeposition (see Holland, Vacuum Deposition Of Thin Films (Wiley, NewYork, N.Y., 1956)), or any other method of forming thin metal films. By“proper solvent” is meant a solvent that adheres to (wets) the tip well.The proper solvent will vary depending on the patterning compound used,the type of tip used, whether or not the tip is coated with an adhesionlayer, and the material used to form the adhesion layer. For example,acetonitrile adheres well to uncoated silicon nitride tips, making theuse of an adhesion layer unnecessary when acetonitrile is used as thesolvent for a patterning compound. In contrast, water does not adhere touncoated silicon nitride tips. Water does adhere well to titanium-coatedsilicon nitride tips, and such coated tips can be used when water isused as the solvent. Physisorption of aqueous solutions of patterningcompounds can also be enhanced by increasing the hydrophilicity of thetips (whether coated or uncoated with an adhesion layer). For instance,hydrophilicity can be increased by cleaning the tips (e.g., with apiranha solution, by plasma cleaning, or with UV ozone cleaning) or byoxygen plasma etching. See Lo et al., Langmuir, 15, 6522-6526 (1999);James et al., Langmuir, 14, 741-744 (1998). Alternatively, a mixture ofwater and another solvent (e.g., 1:3 ratio of water:acetonitrile) mayadhere to uncoated silicon nitride tips, making the use of an adhesionlayer or treatment to increase hydrophilicity unnecessary. The propersolvent for a particular set of circumstances can be determinedempirically using the guidance provided herein.

The substrate may be of any shape and size. In particular, the substratemay be flat or curved. Substrates may be made of any material which canbe modified by a patterning compound to form stable surface structures(see below). Substrates useful in the practice of the invention includemetals (e.g., gold, silver, aluminum, copper, platinum, and paladium),metal oxides (e.g., oxides of Al, Ti, Fe, Ag, Zn, Zr, In, Sn and Cu),semiconductor materials (e.g., Si, CdSe, CdS and CdS coated with ZnS),magnetic materials (e.g., ferromagnetite), polymers or polymer-coatedsubstrates, superconductor materials (YBa₂Cu₃O_(7-δ)), Si, SiO₂, glass,AgI, AgBr, HgI₂, PbS, PbSe, ZnSe, ZnS, ZnTe, CdTe, InP, In₂O₃/SnO₂,In₂S₃, In₂Se₃, In₂Te₃, Cd₃P₂, Cd₃As₂, InAs, AlAs, GaP, and GaAs. Methodsof making such substrates are well-known in the art and includeevaporation and sputtering (metal films), crystal semiconductor growth(e.g., Si, Ge, GaAs), chemical vapor deposition (semiconductor thinfilms), epitaxial growth (crystalline semiconductor thim films), andthermal shrinkage (oriented polymers). See, e.g., Alcock et al.,Canadian Metallurgical Quarterly, 23, 309 (1984); Holland, VacuumDeposition of Thin Films (Wiley, New York 1956); Grove, Philos. Trans.Faraday Soc., 87 (1852); Teal, IEEE Trans. Electron Dev. ED-23, 621(1976); Sell, Key Eng. Materials, 58, 169 (1991); Keller et al.,Float-Zone Silicon (Marcel Dekker, New York, 1981); Sherman, ChemicalVapor Deposition For Microelectronics: Principles, Technology AndApplications (Noyes, Park Ridges, N.J., 1987); Epitaxial SiliconTechnology (Baliga, ed., Academic Press, Orlando, Fla., 1986); U.S. Pat.No. 5,138,174; Hidber et al., Langmuir, 12, 5209-5215 (1996). Suitablesubstrates can also be obtained commercially from, e.g., DigitalInstruments (gold), Molecular Imaging (gold), Park Scientific (gold),Electronic Materials, Inc. (semiconductor wafers), Silicon Quest, Inc.(semiconductor wafers), MEMS Technology Applications Center, Inc.(semiconductor wafers), Crystal Specialties, Inc. (semiconductorwafers), Siltronix, Switzerland (silicon wafers), Aleene's, Buellton,Calif. (biaxially-oriented polystyrene sheets), and Kama Corp.,Hazelton, Pa. (oriented thin films of polystyrene).

The SPM tip is used to deliver a patterning compound to a substrate ofinterest. Any patterning compound can be used, provided it is capable ofmodifying the substrate to form stable surface structures. Stablesurface structures are formed by chemisorption of the molecules of thepatterning compound onto the substrate or by covalent linkage of themolecules of the patterning compound to the substrate.

Many suitable compounds which can be used as the patterning compound,and the corresponding substrate(s) for the compounds, are known in theart. For example:

-   -   a. Compounds of the formula R₁SH, R₁SSR₂, R₁SR₂, R₁SO₂H, (R₁)₃P,        R₁NC, R₁CN, (R₁)₃N, R₁COOH, or ArSH can be used to pattern gold        substrates;    -   b. Compounds of formula R₁SH, (R₁)₃N, or ArSH can be used to        pattern silver, copper, palladium and semiconductor substrates;    -   c. Compounds of the formula R₁NC, R₁SH, R₁SSR₂, or R₁SR₂ can be        used to pattern platinum substrates;    -   d. Compounds of the formula R₁SH can be used to pattern        aluminum, TiO₂, SiO₂, GaAs and InP substrates;    -   e. Organosilanes, including compounds of the formula R₁SiCl₃,        R₁Si(OR₂)₃, (R₁COO)₂, R₁CH═CH₂, R₁Li or R₁MgX, can be used to        pattern Si, SiO₂ and glass substrates;    -   f. Compounds of the formula R₁COOH or R₁CONHR₂ can be used to        pattern metal oxide substrates;    -   g. Compounds of the formula R₁SH, R₁NH₂, ArNH₂, pyrrole, or        pyrrole derivatives wherein R₁ is attached to one of the carbons        of the pyrrole ring, can be used to pattern cuprate high        temperature superconductors;    -   h. Compounds of the formula R₁PO₃H₂ can be used to pattern ZrO₂        and In₂O₃/SnO₂ substrates;    -   i. Compounds of the formula R₁COOH can be used to pattern        aluminum, copper, silicon and platinum substrates;    -   j. Compounds that are unsaturated, such as azoalkanes (R₃NNR₃)        and isothiocyanates (R₃NCS), can be used to pattern silicon        substrates;    -   k. Proteins and peptides can be used to pattern, gold, silver,        glass, silicon, and polystyrene.        In the above formulas:    -   R₁ and R₂ each has the formula X(CH₂)n and, if a compound is        substituted with both R₁ and R₂, then R₁ and R₂ can be the same        or different;    -   R₃ has the formula CH₃(CH₂)n;    -   n is 0-30;    -   Ar is an aryl;    -   X is —CH₃, —CHCH₃, —COOH, —CO₂(CH₂)_(m)CH₃, —OH, —CH₂OH,        ethylene glycol, hexa(ethylene glycol), —O(CH₂)_(m)CH₃, —NH₂,        —NH(CH₂)_(m)NH₂, halogen, glucose, maltose, fullerene C60, a        nucleic acid (oligonucleotide, DNA, RNA, etc.), a protein (e.g.,        an antibody or enzyme) or a ligand (e.g., an antigen, enzyme        substrate or receptor); and    -   m is 0-30.

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B,102, 9015-9028 (1998) (attachment of thiols to InP); Menzel et al., Adv.Mater. (Weinheim, Ger.), 11, 131-134 (1999) (attachment of disulfides togold); Yonezawa et al., Chem. Mater., 11, 33-35 (1999) (attachment ofdisulfides to gold); Porter et al., Langmuir, 14, 7378-7386 (1998)(attachment of disulfides to gold); Son et al., J. Phys. Chem., 98,8488-93 (1994) (attachment of nitrites to gold and silver); Steiner etal., Langmuir, 8, 2771-7 (1992) (attachment of nitrites to gold andcopper); Solomun et al., J. Phys. Chem., 95, 10041-9 (1991) (attachmentof nitrites to gold); Solomun et al., Ber. Bunsen-Ges. Phys. Chem., 95,95-8 (1991) (attachment of nitrites to gold); Henderson et al., Inorg.Chim. Acta, 242, 115-24 (1996) (attachment of isonitriles to gold); Hueet al., J. Phys. Chem. B, 103, 10489-10495 (1999) (attachment ofisonitriles to gold); Hickman et al., Langmuir, 8, 357-9 (1992)(attachment of isonitriles to platinum); Steiner et al., Langmuir, 8,90-4 (1992) (attachment of amines and phospines to gold and attachmentof amines to copper); Mayya et al., J. Phys. Chem. B, 101, 9790-9793(1997) (attachment of amines to gold and silver); Chen et al., Langmuir,15, 1075-1082 (1999) (attachment of carboxylates to gold); Tao, J. Am.Chem. Soc., 115, 4350-4358 (1993) (attachment of carboxylates to copperand silver); Laibinis et al., J. Am. Chem. Soc., 114, 1990-5 (1992)(attachment of thiols to silver and copper); Laibinis et al., Langmuir,7, 3167-73 (1991) (attachment of thiols to silver); Fenter et al.,Langmuir, 7, 2013-16 (1991) (attachment of thiols to silver); Chang etal., Am. Chem. Soc., 116, 6792-805 (1994) (attachment of thiols tosilver); Li et al., J. Phys. Chem., 98, 11751-5 (1994) (attachment ofthiols to silver); Li et al., Report, 24 pp (1994) (attachment of thiolsto silver); Tarlov et al., U.S. Pat. No. 5,942,397 (attachment of thiolsto silver and copper); Waldeck, et al., PCT application WO/99/48682(attachment of thiols to silver and copper); Gui et al., Langmuir, 7,955-63 (1991) (attachment of thiols to silver); Walczak et al., J. Am.Chem. Soc., 113, 2370-8 (1991) (attachment of thiols to silver);Sangiorgi et al., Gazz. Chim. Ital., 111, 99-102 (1981) (attachment ofamines to copper); Magallon et al., Book of Abstracts, 215th ACSNational Meeting, Dallas, Mar. 29-Apr. 2, 1998, COLL-048 (attachment ofamines to copper); Patil et al., Langmuir, 14, 2707-2711 (1998)(attachment of amines to silver); Sastry et al., J. Phys. Chem. B, 101,4954-4958 (1997) (attachment of amines to silver); Bansal et al., J.Phys. Chem. B, 102, 4058-4060 (1998) (attachment of alkyl lithium tosilicon); Bansal et al., J. Phys. Chem. B, 102, 1067-1070 (1998)(attachment of alkyl lithium to silicon); Chidsey, Book of Abstracts,214th ACS National Meeting, Las Vegas, Nev., Sep. 7-11, 1997, I&EC-027(attachment of alkyl lithium to silicon); Song, J. H., Thesis,University of California at San Diego (1998) (attachment of alkyllithium to silicon dioxide); Meyer et al., J. Am. Chem. Soc., 110,4914-18 (1988) (attachment of amines to semiconductors); Brazdil et al.J. Phys. Chem., 85, 1005-14 (1981) (attachment of amines tosemiconductors); James et al., Langmuir, 14, 741-744 (1998) (attachmentof proteins and peptides to glass); Bernard et al., Langmuir, 14,2225-2229 (1998) (attachment of proteins to glass, polystyrene, gold,silver and silicon wafers).

Other compounds known in the art besides those listed above, or whichare developed or discovered using the guidelines provided herein orotherwise, can also be used as the patterning compound. Presentlypreferred are alkanethiols and arylthiols on a variety of substrates andtrichlorosilanes on SiO₂ substrates. (see Examples 1 and 2).

To practice DPN, the SPM tip is coated with a patterning compound. Thiscan be accomplished in a number of ways. For instance, the tip can becoated by vapor deposition, by direct contact scanning, or by bringingthe tip into contact with a solution of the patterning compound.

The simplest method of coating the tips is by direct contact scanning.Coating by direct contact scanning is accomplished by depositing a dropof a saturated solution of the patterning compound on a solid substrate(e.g., glass or silicon nitride; available from Fisher Scientific orMEMS Technology Application Center). Upon drying, the patterningcompound forms a microcrystalline phase on the substrate. To coat thepatterning compound on the SPM tip, the tip is scanned repeatedly acrossthis microcrystalline phase. While this method is simple, it does notlead to the best loading of the tip, since it is difficult to controlthe amount of patterning compound transferred from the substrate to thetip.

The tips can also be coated by vapor deposition. See Sherman, ChemicalVapor Deposition For Microelectronics: Principles, Technology AndApplications (Noyes, Park Ridges, N.J., 1987. Briefly, a patterningcompound (in pure form, solid or liquid, no solvent) is placed on asolid substrate (e.g., glass or silicon nitride; obtained from FisherScientific or MEMS Technology Application Center), and the tip isposition near (within about 1-20 cm, depending on chamber design) thepatterning compound. The compound is then heated to a temperature atwhich it vaporizes, thereby coating the tip with the compound. Forinstance, 1-octadecanethiol can be vapor deposited at 60° C. Coating byvapor deposition should be performed in a closed chamber to preventcontamination of other areas. If the patterning compound is one which isoxidized by air, the chamber should be a vacuum chamber or anitrogen-filled chamber. Coating the tips by vapor deposition producesthin, uniform layers of patterning compounds on the tips and gives veryreliable results in DPN.

Preferably, however, the SPM tip is coated by dipping the tip into asolution of the patterning compound. The solvent is not critical; allthat is required is that the compound be in solution. However, thesolvent is preferably the one in which the patterning compound is mostsoluble. Also, the solution is preferably a saturated solution. Inaddition, the solvent is preferably one that adheres to (wets) the tip(uncoated or coated with an adhesion layer) very well (see above). Thetip is maintained in contact with the solution of the patterningcompound for a time sufficient for the compound to coat the tip. Suchtimes can be determined empirically. Generally, from about 30 seconds toabout 3 minutes is sufficient. Preferably, the tip is dipped in thesolution multiple times, with the tip being dried between each dipping.The number of times a tip needs to be dipped in a chosen solution can bedetermined empirically. Preferably, the tip is dried by blowing an inertgas (such as carbon tetrafluoride,1,2-dichloro-1,1,2,2,-tetrafluoroethane, dichlorodifluoromethane,octafluorocyclobutane, trichlorofluoromethane, difluoroethane, nitrogen,nitrogen, argon or dehumidified air) not containing any particles (i.e.,purified) over the tip. Generally, about 10 seconds of blowing with thegas at room temperature is sufficient to dry the tip. After dipping (thesingle dipping or the last of multiple dippings), the tip may be usedwet to pattern the substrate, or it may be dried (preferably asdescribed above) before use. A dry tip gives a low, but stable, rate oftransport of the patterning compound for a long time (on the order ofweeks), whereas a wet tip gives a high rate of transport of thepatterning compound for a short time (about 2-3 hours). A dry tip ispreferred for compounds having a good rate of transport under dryconditions (such as the compounds listed above wherein X=—CH₃), whereasa wet tip is preferred for compounds having a low rate of transportunder dry conditions (such as the compounds listed above whereinX=—COOH).

To perform DPN, the coated tip is brought into contact with a substrate.Both the patterning compound and a transport medium are necessary forDPN since the patterning compound is transported to the substrate bycapillary transport (see FIG. 1). The transport medium forms a meniscuswhich bridges the gap between the tip and the substrate (see FIG. 1).Thus, the tip is “in contact” with the substrate when it is close enoughso that this meniscus forms. Suitable transport media include water,hydrocarbons (e.g., hexane), and solvents in which the patterningcompounds are soluble (e.g., the solvent used for coating the tip—seeabove). Faster writing with the tip can be accomplished by using thetransport medium in which the patterning compound is most soluble.

Single tips can be used to write a pattern utilizing an AFM or similardevice. As is known in the art, only some STM and NSOM tips can be usedin an AFM, and STM and NSOM tips which can be used in an AFM areavailable commercially. Two or more different patterning compounds canbe applied to the same substrate to form patterns (the same ordifferent) of the different compounds by removing the first tip coatedwith a first patterning compound and replacing it with another tipcoated with a different patterning compound. Alternatively, a pluralityof tips can be used in a single device to write a plurality of patterns(the same pattern or different patterns) on a substrate using the sameor different patterning compounds. See, e.g., U.S. Pat. No. 5,666,190,which describes a device comprising multiple cantilevers and tips forpatterning a substrate.

When two or more patterns and/or two or more patterning compounds (inthe same or different patterns) are applied to a single substrate, apositioning (registration) system is used to align the patterns and/orpatterning compounds relative to each other and/or relative to selectedalignment marks. For instance, two or more alignment marks, which can beimaged by normal AFM imaging methods, are applied to the substrate byDPN or another lithographic technique (such as photolithography ore-beam lithography). The alignment marks may be simple shapes, such as across or rectangle. Better resolution is obtained by making thealignment marks using DPN. If DPN is used, the alignment marks arepreferably made with patterning compounds which form strong covalentbonds with the substrate. The best compound for forming the alignmentmarks on gold substrates is 16-mercaptohexadecanoic acid. The alignmentmarks are imaged by normal AFM methods (such as lateral force AFMimaging, AFM topography imaging and non-contact mode AFM imaging),preferably using an SPM tip coated with a patterning compound for makinga desired pattern. For this reason, the patterning compounds used tomake the alignment marks should not react with the other patterningcompounds which are to be used to make the desired patterns and shouldnot be destroyed by subsequent DPN patterning. Using the imaging data,the proper parameters (position and orientation) can be calculated usingsimple computer programs (e.g., Microsoft Excel spreadsheet), and thedesired pattern(s) deposited on the substrate using the calculatedparameters. Virtually an infinite number of patterns and/or patterningcompounds can be positioned using the alignment marks since the systemis based on calculating positions and orientations relative to thealignment marks. To get the best results, the SPM tip positioning systemwhich is used should be stable and not have drift problems. One AFMpositioning system which meets these standards is the 100 micrometerpizoelectric tube scanner available from Park Scientific. It providesstable positioning with nanometer scale resolution.

DPN can also be used in a nanoplotter format by having a series ofmicron-scale wells (or other containers) containing a plurality ofdifferent patterning compounds and rinsing solutions adjacent thesubstrate. The tip can be dipped into a well containing a patterningcompound to coat the tip, and the coated tip is used to apply a patternto the substrate. Then the tip is rinsed by dipping it in a rinsing wellor series of rinsing wells. The rinsed tip is dipped into another wellto be coated with a second patterning compound and is then used to applya pattern to the substrate with the second patterning compound. Thepatterns are aligned as described in the previous paragraph. The processof coating the tip with a patterning compound, applying a pattern to thesubstrate with this patterning compound, and rinsing the tip, can berepeated as many times as desired, and the entire process can beautomated using appropriate software.

DPN can also be used to apply a second patterning compound to a firstpatterning compound which has already been applied to a substrate,whether by DPN or another method. The second patterning compound ischosen so that it reacts chemically or otherwise stably combines (e.g.,by hybridization of two complimentary strands of nucleic acid) with thefirst patterning compound. See, e.g., Dubois and Nuzzo, Annu. Rev. Phys.Chem., 43, 437-63 (1992); Yan et al., Langmuir, 15, 1208-1214 (1999);Lahiri et al., Langmuir, 15, 2055-2060 (1999); and Huck et al.,Langmuir, 15, 6862-6867 (1999). As with DPN performed directly on asubstrate, both the second patterning compound and a transport mediumare necessary, since the second patterning compound is transported tothe first patterning compound by capillary transport (see above). Third,fourth, etc., patterning compounds can also be applied to the firstpatterning compound, or to other patterning compounds, already on thesubstrate. Further, additional patterning compounds can be applied toform multiple layers of patterning compounds. Each of these additionalpatterning compounds may be the same or different than the otherpatterning compounds, and each of the multiple layers may be the same ordifferent than the other layers and may be composed of one or moredifferent patterning compounds.

Further, DPN can be used in combination with other lithographictechniques. For instance, DPN can be used in conjunction withmicrocontact printing and the other lithographic techniques discussed inthe Background section above.

Several parameters affect the resolution of DPN, and its ultimateresolution is not yet clear. First, the grain size of the substrateaffects DPN resolution much like the texture of paper controls theresolution of conventional writing. As shown in Example 1 below, DPN hasbeen used to make lines 30 nm in width on a particular gold substrate.This size is the average grain diameter of the gold substrate, and itrepresents the resolution limit of DPN on this type of substrate. It isexpected that better resolution will be obtained using smoother (smallergrain size) substrates, such as silicon. Indeed, using another, smoothergold substrate, the resolution was increased to 15 nm (see Example 4).

Second, chemisorption, covalent attachment and self-assembly all act tolimit diffusion of the molecules after deposition. In contrast,compounds, such as water, which do not anchor to the substrate, formonly metastable patterns of poor resolution (See Piner et al., Langmuir,13:6864 (1997)) and cannot be used.

Third, the tip-substrate contact time and, thus, scan speed influenceDPN resolution. Faster scan speeds and a smaller number of traces givenarrower lines.

Fourth, the rate of transport of the patterning compound from the tip tothe substrate affects resolution. For instance, using water as thetransport medium, it has been found that relative humidity affects theresolution of the lithographic process. For example, a 30-nm-wide line(FIG. 2C) required 5 minutes to generate in a 34% relative humidityenvironment, whereas a 100-nm-line (FIG. 2D) required 1.5 minutes togenerate in a 42% relative humidity environment. It is known that thesize of the water meniscus that bridges the tip and substrate dependsupon relative humidity (Piner et al., Langmuir, 13:6864 (1997)), and thesize of the water meniscus affects the rate of transport of thepatterning compound to the substrate. Further, when a wet tip is used,the water meniscus contains residual solvent is the transport medium,and the transport rate is also affected by the properties of thesolvent.

Fifth, the sharpness of the tip also affects the resolution of DPN.Thus, it is expected that better resolution will be obtained usingsharper tips (e.g., by changing the tips frequently, cleaning the tipsbefore coating them, and attaching sharp structures (such as carbonnanotubes) to the ends of the tips).

In summary, DPN is a simple but powerful method for transportingmolecules from SPM tips to substrates at resolutions comparable to thoseachieved with much more expensive and sophisticated competitivelithographic methods, such as electron-beam lithography. DPN is a usefultool for creating and functionalizing microscale and nanoscalestructures. For instance, DPN can be used in the fabrication ofmicrosensors, microreactors, combinatorial arrays, micromechanicalsystems, microanalytical systems, biosurfaces, biomaterials,microelectronics, microoptical systems, and nanoelectronic devices. See,e.g., Xia and Whitesides, Angew. Chem. Int. Ed., 37, 550-575 (1998). DPNshould be especially useful for the detailed functionalization ofnanoscale devices prepared by more conventional lithographic methods.See Reed et al., Science, 278:252 (1997); Feldheim et al., Chem. Soc.Rev., 27:1 (1998).

The invention also provides kits for performing DPN. The kits compriseone or more substrates and one or more SPM tips. The substrates and thetips are those described above. The tips may be coated with a patterningcompound or may be uncoated. If the tips are uncoated, the kit mayfurther comprise one or more containers, each container holding apatterning compound. The patterning compounds are those described above.Any suitable container can be used, such as a vial, tube or jar. The kitmay further comprise materials for forming a thin solid adhesion layerto enhance physisorption of the patterning compounds to the tips asdescribed above (such as a container of titanium or chromium), materialsuseful for coating the tips with the patterning compounds (such assolvents for the patterning compounds or solid substrates for directcontact scanning), and/or materials for performing lithography bymethods other than DPN (see the Background section and references citedtherein). Finally, the kit may comprise other reagents and items usefulfor performing DPN or any other lithography method, such as reagents,beakers, vials, etc.

As noted above, when an AFM is operated in air, water condenses betweenthe tip and surface and then is transported by means of the capillary asthe tip is scanned across the surface. This filled capillary, and thecapillary force associated with it, significantly impede the operationof the AFM and substantially affect the imaging process.

Quite surprisingly, it has been found that AFM tips coated with certainhydrophobic compounds exhibit an improved ability to image substrates inair by AFM as compared to uncoated tips. The reason for this is that thehydrophobic molecules reduce the size of the water meniscus formed andeffectively reduce friction. As a consequence, the resolution of AFM inair is increased using a coated tip, as compared to using an uncoatedtip. Accordingly, coating tips with the hydrophobic molecules can beutilized as a general pretreatment for AFM tips for performing AFM inair.

Hydrophobic compounds useful for coating AFM tips for performing AFM inair must form a uniform thin coating on the tip surface, must not bindcovalently to the substrate being imaged or to the tip, must bind to thetip more strongly than to the substrate, and must stay solid at thetemperature of AFM operation. Suitable hydrophobic compounds includethose hydrophobic compounds described above for use as patterningcompounds, provided that such hydrophobic patterning compounds are notused to coat AFM tips which are used to image a corresponding substratefor the patterning compound or to coat AFM tips which are made of, orcoated with, materials useful as the corresponding substrate for thepatterning compound. Preferred hydrophobic compounds for most substratesare those having the formula R₄NH₂, wherein R₄ is an alkyl of theformula CH₃(CH₂)_(n) or an aryl, and n is 0-30, preferably 10-20 (seediscussion of patterning compounds above). Particularly preferred is1-dodecylamine for AFM temperatures of operation below 74° F. (about23.3° C.).

AFM in air using any AFM tip may be improved by coating the AFM tip withthe hydrophobic compounds described in the previous paragraph. SuitableAFM tips include those described above for use in DPN.

AFM tips can be coated with the hydrophobic compounds in a variety ofways. Suitable methods include those described above for coating AFMtips with patterning compounds for use in DPN. Preferably, the AFM tipis coated with a hydrophobic compound by simply dipping the tip into asolution of the compound for a sufficient time to coat the tip and thendrying the coated tip with an inert gas, all as described above forcoating a tip with a patterning compound.

After the tip is coated, AFM is performed in the same manner as it wouldbe if the tip were not coated. No changes in AFM procedures have beenfound necessary.

EXAMPLES Example 1 “Dip Pen” Nanolithography with Alkanethiols on a GoldSubstrate

The transfer of 1-octadecanethiol (ODT) to gold (Au) surfaces is asystem that has been studied extensively. See Bain et al., Angew. Chem.Int. Ed. Engl., 28:506 (1989); A. Ulman, An Introduction to UltrathinOrganic Films: From Langmuir-Blodgett to Self-Assembly (Academic Press,Boston, 1991); Dubois et al., Annu. Rev. Phys. Chem., 43:437 (1992);Bishop et al., Curr. Opin. Coll. Interf. Sci., 1:127 (1996); Alves etal., J. Am. Chem. Soc., 114:1222 (1992). Au having thismoderately-air-stable molecule immobilized on it can be easilydifferentiated from unmodified Au by means of lateral force microscopy(LFM).

When an AFM tip coated with ODT is brought into contact with a samplesurface, the ODT flows from the tip to the sample by capillary action,much like a dip pen (FIG. 1). This process has been studied using aconventional AFM tip on thin film substrates that were prepared bythermally evaporating 300 Å of polycrystalline Au onto mica at roomtemperature. A Park Scientific Model CP AFM instrument was used toperform all experiments. The scanner was enclosed in a glass isolationchamber, and the relative humidity was measured with a hygrometer. Allhumidity measurements have an absolute error of ±5%. A silicon nitridetip (Park Scientific, Microlever A) was coated with ODT by dipping thecantilever into a saturated solution of ODT in acetonitrile for 1minute. The cantilever was blown dry with compressed difluoroethaneprior to use.

A simple demonstration of the DPN process involved raster scanning a tipthat was prepared in this manner across a 1 μm by 1 μm section of a Ausubstrate (FIG. 2A). An LFM image of this section within a larger scanarea (3 μm by 3 μm) showed two areas of differing contrast (FIG. 2A).The interior dark area, or region of lower lateral force, was adeposited monolayer of ODT, and the exterior lighter area was bare Au.

Formation of high-quality self-assembled monolayers (SAMs) occurred whenthe deposition process was carried out on Au(111)/mica, which wasprepared by annealing the Au thin film substrates at 300° C. for 3hours. Alves et al., J. Am. Chem. Soc., 114:1222 (1992). In this case,it was possible to obtain a lattice-resolved image of an ODT SAM (FIG.2B). The hexagonal lattice parameter of 5.0±0.2 Å compares well withreported values for SAMs of ODT on Au(111) (Id.) and shows that ODT,rather than some other adsorbate (water or acetonitrile), wastransported from the tip to the substrate.

Although the experiments performed on Au(111)/mica provided importantinformation about the chemical identity of the transported species inthese experiments, Au(111)/mica is a poor substrate for DPN. The deepvalleys around the small Au(111) facets make it difficult to draw long(micrometer) contiguous lines with nanometer widths.

The nonannealed Au substrates are relatively rough (root-mean squareroughness≅2 nm), but 30 nm lines could be deposited by DPN (FIG. 2C).This distance is the average Au grain diameter of the thin filmsubstrates and represents the resolution limit of DPN on this type ofsubstrate. The 30-nm molecule-based line prepared on this type ofsubstrate was discontinuous and followed the grain edges of the Au.Smoother and more contiguous lines could be drawn by increasing the linewidth to 100 nm (FIG. 2D) or presumably by using a smoother Ausubstrate. The width of the line depends upon tip scan speed and rate oftransport of the alkanethiol from the tip to the substrate (relativehumidity can change the transport rate). Faster scan speeds and asmaller number of traces give narrower lines.

DPN was also used to prepare molecular dot features to demonstrate thediffusion properties of the “ink” (FIGS. 3A and 3B). The ODT-coated tipwas brought into contact (set point=1 nN) with the Au substrate for aset period of time. For example, 0.66 μm, 0.88 μm, and 1.6 μm diameterODT dots were generated by holding the tip in contact with the surfacefor 2, 4, and 16 minutes, respectively (left to right, FIG. 3A). Theuniform appearance of the dots likely reflects an even flow of ODT inall directions from the tip to the surface. Opposite contrast imageswere obtained by depositing dots of an alkanethiol derivative,16-mercaptohexadecanoic acid in an analogous fashion (FIG. 3B). This notonly provides additional evidence that the molecules are beingtransported from the tip to the surface but also demonstrates themolecular generality of DPN.

Arrays and grids could be generated in addition to individual lines anddots. An array of twenty-five 0.46-μm diameter ODT dots spaced 0.54 μmapart (FIG. 3C) was generated by holding an ODT-coated tip in contactwith the surface (1 nM) for 20 seconds at 45% relative humidity withoutlateral movement to form each dot. A grid consisting of eightintersecting lines 2 μm in length and 100 nm wide (FIG. 3D) wasgenerated by sweeping the ODT-coated tip on a Au surface at a 4 μm persecond scan speed with a 1 nN force for 1.5 minutes to form each line.

Example 2 “Dip Pen” Nanolithography

A large number of compounds and substrates have been successfullyutilized in DPN. They are listed below in Table 1, along with possibleuses for the combinations of compounds and substrates.

AFM tips (Park Scientific) were used. The tips were silicon tips,silicon nitride tips, and silicon nitride tips coated with a 10 nm layerof titanium to enhance physisorption of patterning compounds. Thesilicon nitride tips were coated with the titanium by vacuum depositionas described in Holland, Vacuum Deposition Of Thin Films (Wiley, NewYork, N.Y., 1956). It should be noted that coating the silicon nitridetips with titanium made the tips dull and decreased the resolution ofDPN. However, titanium-coated tips are useful when water is used as thesolvent for a patterning compound. DPN performed with uncoated siliconnitride tips gave the best resolution (as low as about 10 nm).

Metal film substrates listed in Table 1 were prepared by vacuumdeposition as described in Holland, Vacuum Deposition Of Thin Films(Wiley, New York, N.Y., 1956). Semidconductor substrates were obtainedfrom Electronic Materials, Inc., Silicon Quest, Inc. MEMS TechnologyApplications Center, Inc., or Crystal Specialties, Inc.

The patterning compounds listed in Table 1 were obtained from AldrichChemical Co. The solvents listed in Table 1 were obtained from FisherScientific.

The AFM tips were coated with the patterning compounds as described inExample 1 (dipping in a solution of the patterning compound followed bydrying with an inert gas), by vapor deposition or by direct contactscanning. The method of Example 1 gave the best results. Also, dippingand drying the tips multiple times further improved results.

The tips were coated by vapor deposition as described in Sherman,Chemical Vapor Deposition For Microelectronics: Principles, TechnologyAnd Applications (Noyes, Park Ridges, N.J., 1987). Briefly, a patterningcompound in pure form (solid or liquid, no solvent) was placed on asolid substrate (e.g., glass or silicon nitride; obtained from FisherScientific or MEMS Technology Application Center) in a closed chamber.For compounds which are oxidized by air, a vacuum chamber or anitrogen-filled chamber was used. The AFM tip was position about 1-20 cmfrom the patterning compound, the distance depending on the amount ofmaterial and the chamber design. The compound was then heated to atemperature at which it vaporizes, thereby coating the tip with thecompound. For instance, 1-octadecanethiol can be vapor deposited at 60°C. Coating the tips by vapor deposition produced thin, uniform layers ofpatterning compounds on the tips and gave quite reliable results forDPN.

The tips were coated by direct contact scanning by depositing a drop ofa saturated solution of the patterning compound on a solid substrate(e.g., glass or silicon nitride; obtained from Fisher Scientific or MEMSTechnology Application Center). Upon drying, the patterning compoundformed a microcrystalline phase on the substrate. To load the patterningcompound on the AFM tip, the tip was scanned repeatedly (˜5 Hz scanspeed) across this microcrystalline phase. While this method was simple,it did not lead to the best loading of the tip, since it was difficultto control the amount of patterning compound transferred from thesubstrate to the tip.

DPN was performed as described in Example 1 using a Park Scientific AFM,Model CP, scanning speed 5-10 Hz. Scanning times ranged from 10 secondsto 5 minutes. Patterns prepared included grids, dots, letters, andrectangles. The width of the grid lines and the lines that formed theletters ranged from 15 nm to 250 nm, and the diameters of the individualdots ranged from 12 nm to 5 micrometers.

TABLE 1 Substrate Patterning Potential Compound/Solvent(s) ApplicationsComments and References Au n-octadecanethiol/ Basic research Study ofintermolecular forces. acetonitrile, ethanol Langmuir, 10, 3315 (1994)Etching resist for Etchant: KCN/O₂(pH~14). microfabrication J. Vac. Sci.Tech. B, 13, 1139 (1995) dodecanethiol/ Molecular Insulating thincoating on acetonitrile, ethanol electronics nanometer scale goldclusters. Superlattices and Microstructures 18, 275 (1995)n-hexadecanethiol/ Etching resist for Etchant; KCN/O₂(pH~14).acetonitrile, ethanol microfabrication Langmuir, 15, 300 (1999)n-docosanethiol/ Etching resist for Etchant: KCN/O₂(pH~14).acetonitrile, ethanol microfabrication J. Vac. Sci. Technol. B, 13, 2846(1995) 11-mercapto-1- Surface Capturing SiO₂ clusters undecanol/functionalization acetonitrile, ethanol 16-mercapto-1- Basic researchStudy of intermolecular forces. hexadecanoic acid/ Langmuir 14, 1508(1998) acetonitrile, ethanol Surface Capturing SiO₂, SnO₂ clusters. J.functionalization Am. Chem. Soc., 114, 5221 (1992) octanedithiol/ Basicresearch Study of intermolecular forces. acetonitrile, ethanol Jpn. J.Appl. Phys. 37, L299 (1998) hexanedithiol/ Surface Capturing goldclusters. J. Am. acetonitrile, ethanol functionalization Chem. Soc.,114, 5221 (1992) propanedithiol/ Basic research Study of intermolecularforces. J. acetonitrile, ethanol Am. Chem. Soc., 114, 5221 (1992)α,α′-p-xylyldithiol/ Surface Capturing gold clusters. acetonitrile,ethanol functionalization Science, 272, 1323 (1996) Molecular Conductingnanometer scale electronics junction. Science, 272, 1323 (1996)4,4′-biphenyldithiol/ Surface Capturing gold and CdS clusters.acetonitrile, ethanol functionalization Inorganica Chemica Acta 242, 115(1996) terphenyldithiol/ Surface Capturing gold and CdS clusters.acetonitrile, ethanol functionalization Inorganica Chemica Acta 242, 115(1996) terphenyldiisocyanide/ Surface Capturing gold and CdS clusters.acetonitrile, funcationalization Inorganica Chemica Acta 242, methylenechloride 115 (1996) Molecular Conductive coating on nanometerelectronics scale gold clusters. Superlattices and Microstructures, 18,275 (1995) DNA/ Gene detection DNA probe to detect biologicalwater:acetonitrile (1:3) cells. J. Am. Chem. Soc. 119, 8916 (1997) Agn-hexadecanethiol/ Etching resist for Etchant: Fe(NO₃)₃(pH~6).acetonitrile, ethanol microfabrication Microelectron. Eng., 32, 255(1996) Al 2-mercaptoacetic acid/ Surface Capturing CdS clusters.acetonitrile, ethanol functionalization J. Am. Chem. Soc., 114, 5221(1992) GaAs-100 n-octadecanethiol/ Basic research Self assembledmonolayer acetonitrile, ethanol formation Etching resist forHCl/HNO₃(pH~1). microfabrication J. Vac. Sci. Technol. B, 11, 2823(1993) TiO2 n-octadecanethiol/ Etching resist for acetonitrile, ethanolmicrofabrication SiO2 16-mercapto-1- Surface Capturing gold and CdSclusters hexadecanoic acid/ functionalization acetonitrile, ethanoloctadecyltrichlorosila Etching resist for Etchant: HF/NH₄F (pH~2).ne(OTS, microfabrication Appl. Phys. Left., 70,1593 (1997)CH₃(CH₂)₁₇SiCl₃) 1.2 nm thick SAM/ hexane APTS, 3-(2- Surface Capturingnanometer scale gold Aminoethlyamino) functionalization clusters.propyltrimethoxy- Appl. Phys. Lett. 70, 2759 (1997) silane/water

Example 3 Atomic Force Microscopy with Coated Tips

As noted above, when an AFM is operated in air, water condenses betweenthe tip and surface and then is transported by means of the capillary asthe tip is scanned across the surface. Piner et al., Langmuir 13,6864-6868 (1997). Notably, this filled capillary, and the capillaryforce associated with it, significantly impede the operation of the AFM,especially when run in lateral force mode. Noy et al., J. Am. Chem. Soc.117, 7943-7951 (1995); Wilbur et al., Langmuir 11, 825-831 (1995). Inair, the capillary force can be 10 times larger than chemical adhesionforce between tip and sample. Therefore, the capillary force cansubstantially affect the structure of the sample and the imagingprocess. To make matters worse, the magnitude of this effect will dependon many variables, including the relative hydrophobicities of the tipand sample, the relative humidity, and the scan speed. For thesereasons, many groups have chosen to work in solution cells where theeffect can be made more uniform and reproducible. Frisbie et al.,Science 265, 2071-2074 (1994); Noy et al., Langmuir 14, 1508-1511(1998). This, however, imposes a large constraint on the use of an AFM,and solvent can affect the structure of the material being imaged.Vezenov et al., J. Am. Chem. Soc. 119, 2006-2015 (1997). Therefore,other methods that allow one to image in air with the capillary effectreduced or eliminated would be desirable.

This example describes one such method. The method involves themodification of silicon nitride AFM tips with a physisorbed layer of1-dodecylamine. Such tips improve one's ability to do LFM in air bysubstantially decreasing the capillary force and providing higherresolution, especially with soft materials.

All data presented in this example were obtained with a Park ScientificModel CP AFM with a combined AFM/LFM head. Cantilevers (model no.MLCT-AUNM) were obtained from Park Scientific and had the followingspecifications: gold coated microlever, silicon nitride tip, cantileverA, spring constant=0.05 N/m. The AFM was mounted in a Park vibrationisolation chamber which had been modified with a dry nitrogen purgeline. Also, an electronic hygrometer, placed inside the chamber, wasused for humidity measurements (±5% with a range of 12˜100%). Muscovitegreen mica was obtained from Ted Pella, Inc. Soda lime glass microscopeslides were obtained from Fisher. Polystyrene spheres with 0.23±0.002 μmdiameters were purchased from Polysciences, and Si₃N₄ on silicon wasobtained from MCNC MEMS Technology Applications Center. 1-Dodecylamine(99+%) was purchased from Aldrich Chemical Inc. and used without furtherpurification. Acetonitrile (A.C.S. grade) was purchased from FisherScientific Instruments, Inc.

Two methods for coating an AFM tip with 1-dodecylamine were explored.The first method involved saturating ethanol or acetonitrile with1-dodecylamine and then depositing a droplet of this solution on a glasssubstrate. Upon drying, the 1-dodecylamine formed a microcrystallinephase on the glass substrate. To load the 1-dodecylamine on the AFM tip,the tip was scanned repeatedly (˜5 Hz scan speed) across thismicrocrystalline phase. While this method was simple, it did not lead tothe best loading of the tip, since it was difficult to control theamount of 1-dodecylamine transferred from the substrate to the tip.

A better method was to transfer the dodecylamine directly from solutionto the AFM cantilever. This method involved soaking the AFM cantileverand tip in acetonitrile for several minutes in order to remove anyresidual contaminants on the tip. Then the tip was soaked in a ˜5 mM1-dodecylamine/acetonitrile solution for approximately 30 seconds. Next,the tip was blown dry with compressed freon. Repeating this procedureseveral times typically gave the best results. The 1-dodecylamine isphysisorbed, rather than chemisorbed, onto the silicon nitride tips.Indeed, the dodecylamine can be rinsed off the tip with acetonitrile asis the case with bulk silicon nitride. Benoit et al. Microbeam andNanobeam Analysis; Springer Verlag, (1996). Modification of the tip inthis manner significantly reduced the capillary effects due toatmospheric water condensation as evidenced by several experimentsdescribed below.

First, a digital oscilloscope, directly connected to the lateral forcedetector of the AFM, was used to record the lateral force output as afunction of time. In this experiment, the force of friction changeddirection when the tip scanned left to right, as compared with right toleft. Therefore, the output of the LFM detector switched polarity eachtime the tip scan direction changed. If one or more AFM raster scanswere recorded, the output of the detector was in the form of a squarewave, FIGS. 4A-B. The height of the square wave is directly proportionalto the sliding friction of the tip on the sample and, therefore, one cancompare the forces of friction between an unmodified tip and a glasssubstrate and between a modified tip and a glass substrate simply bycomparing the height of the square waves under nearly identical scanningand environmental conditions. The tip/sample frictional force was atleast a factor of three less for the modified tip than for theunmodified tip. This experiment was repeated on a mica substrate, and asimilar reduction in friction was observed. In general, reductions infriction measured in this way and under these conditions ranged from afactor of three to more than a factor of ten less for the modified tips,depending upon substrate and environmental conditions, such as relativehumidity.

While this experiment showed that 1-dodecylamine treatment of an AFM tiplowered friction, it did not prove that water and the capillary forcewere the key factors. In another experiment, the effects of the1-dodecylamine coating on the capillary transport of water was examined.Details of water transport involving unmodified tips have been discussedelsewhere. Piner et al., Langmuir 13, 6864-6868 (1997). When an AFM tipwas scanned across a sample, it transported water to the sample bycapillary action, FIG. 5A. After scanning a 4 μm×5 μm area of a sodaglass substrate for several minutes, contiguous adlayers of water weredeposited onto the substrate and imaged by LFM by increasing the scansize. Areas of lower friction, where water had been deposited, appeareddarker than non-painted areas, FIG. 5A. The same experiment conductedwith a tip coated with 1-dodecylamine did not show evidence ofsubstantial water transport, FIG. 5B. Indeed, only random variations infriction were observed.

While these experiments showed that friction could be reduced and thetransport of water from the tip to the substrate by capillary actioncould be inhibited by coating the tip with 1-dodecylamine, they did notprovide information about the resolving power of the modified tip. Micais an excellent substrate to evaluate this issue and, indeed, latticeresolved images could be routinely obtained with the modified tips,demonstrating that this modification procedure reduced the force offriction without blunting the tip, FIG. 6A. It was impossible todetermine whether the portion of the tip that was involved in theimaging was bare or had a layer of 1-dodecylamine on it. In fact, it islikely that the 1-dodecylamine layer had been mechanically removed fromthis part of the tip exposing the bare Si₃N₄. In any event, theremainder of the tip must have had a hydrophobic layer of dodecylamineon it, since water was inhibited from filling the capillary surroundingthe point of contact, thereby reducing the capillary effect (see above).

While the atomic scale imaging ability of the AFM was not adverselyaffected by the 1-dodecylamine coating on the tip, the above experimentdid not provide useful information about the suitability of the tip forobtaining morphology data on a larger scale. In order to obtain suchinformation, a sample of monodisperse 0.23 μm diameter latex spheres wasimaged with both modified and unmodified tips. Since the topographyrecorded by an AFM is a convolution of the shape of the tip and theshape of the sample, any change in the shape of the tip will bereflected in a change in the imaged topography of the latex spheres. Nodetectable difference was found in images taken with unmodified andmodified tips, respectively, FIGS. 7A-B. This shows that the shape ofthe tip was not significantly changed as it would be if a metalliccoating had been evaporated onto it. Moreover, it suggests that the1-dodecylamine coating was fairly uniform over the surface of the tipand was sharp enough that it did not adversely affect atomic scaleimaging.

A significant issue pertains to the performance of the modified tips inthe imaging of soft materials. Typically, it is difficult to determinewhether or not a chemically-modified tip exhibits improved performanceas compared with a bare tip. This is because chemical modification isoften an irreversible process which sometimes requires the deposition ofan intermediary layer. However, since the modification process reportedherein was based upon physisorbed layers of 1-dodecylamine, it waspossible to compare the performance of a tip before modification, aftermodification, and after the tip had been rinsed and the 1-dodecylaminehad been removed. Qualitatively, the 1-dodecylamine-modified tips alwaysprovided significant improvements in the imaging of monolayers basedupon alkanethiols and organic crystals deposited onto a variety ofsubstrates. For example, a lattice resolved image of a hydrophilicself-assembled monolayer of 11-mercapto-1-undecanol on a Au(111) surfacewas routinely obtained with a modified tip, FIG. 6B. The lattice couldnot be resolved with the same unmodified AFM tip. On this surface, thecoated tip showed a reduction in friction of at least a factor of fiveby the square wave analysis (see above). It should be noted, that theOH-terminated SAM is hydrophilic and, hence, has a strong capillaryattraction to a clean tip. Reducing the capillary force by the modifiedtip allows one to image the lattice.

A second example of improved resolution involved imaging free standingliquid surfaces, such as water condensed on mica. It is well known thatat humidities between 30 and 40 percent, water has two distinct phaseson mica. Hu et al., Science 268, 267-269 (1995). In previous work bythis group, a non-contact mode scanning polarization force microscope(SPFM) was used to image these phases. It was found that, when a probetip came into contact with mica, strong capillary forces caused water towet the tip and strongly disturbed the water condensate on the mica. Toreduce the capillary effect so that two phases of water could be imaged,the tip was kept ˜20 nm away from the surface. Because of thisconstraint, one cannot image such phases with a contact mode scanningprobe technique. FIGS. 6C-D show images of the two phases of water onmica recorded at 30 percent humidity with a 1-dodecylamine modified tipin contact mode. The heights of the features (FIG. 6C) corresponded withthe frictional map (FIG. 6D), with higher features having lowerfriction. The quality of the modified tip, which it is believedcorrelates with the uniformity of the 1-dodecylamine layer on the tip,was important. Only well modified tips made it possible to image the twophases of water, while less well modified ones resulted in poorerquality images. In fact, this was such a sensitive test that it could beused as a diagnostic indicator of the quality of the1-dodecylamine-modified tips before proceeding to other samples.

In conclusion, this example describes a very simple, but extremelyuseful, method for making Si₃N₄ AFM tips hydrophobic. This modificationprocedure lowers the capillary force and improves the performance of theAFM in air. Significantly, it does not adversely affect the shape of theAFM tip and allows one to obtain lattice resolved images of hydrophilicsubstrates, including soft materials such as SAMs and even free-standingwater, on a solid support. The development of methodology that allowsone to get such information in air is extremely important because,although solution cells can reduce the effect of the capillary force,the structures of soft materials can be significantly affected bysolvent. Vezenov et al., J. Am. Soc. 119, 2006-2015 (1997). Finally,although it might be possible to make an AFM tip more hydrophobic byfirst coating it with a metal layer and then derivatizing the metallayer with a hydrophobic chemisorbed organic monolayer, it is difficultto do so without concomitantly blunting the AFM tip.

Example 4 Multicomponent “Dip Pen” Nanolithography

The inability to align nanoscale lithographically generated patternscomprised of chemically distinct materials is an issue that limits theadvancement of both solid-state and molecule-based nanoelectronics. Reedet al., Science 278, 252 (1997); Feldheim, et al., Chem. Soc. Rev. 27, 1(1998). The primary reasons for this problem are that many lithographicprocesses: 1) rely on masking or stamping procedures, 2) utilize resistlayers, 3) are subject to significant thermal drift problems, and 4)rely on optical-based pattern alignment. Campbell, The Science andEngineering of Microelectronic Fabrication (Oxford Press); Chou et al.,Appl. Phys. Lett. 67, 3114 (1995); Wang et al., Appl. Phys. Lett. 70,1593 (1997); Jackman et al., Science 269, 664(1995); Kim et al., Nature376, 581 (1995); Schoer et al., Langmuir 13, 2323 (1997); Whelan et al.,Appl. Phys. Lett. 69, 4245 (1996); Younkin et al., Appl. Phys. Lett. 71,1261 (1997); Bottomley, Anal. Chem. 70, 425R. (1998); Nyffenegger andPenner, Chem. Rev. 97, 1195 (1997); Berggren, et al., Science 269, 1255(1995); Sondag-Huethorst et al., Appl. Phys. Lett. 64, 285 (1994);Schoer and Crooks, Langmuir 13, 2323 (1997); Xu and Liu, Langmuir 13,127 (1997); Perkins, et al., Appl. Phys. Lett. 68, 550 (1996); Carr, etal., J. Vac. Sci. Technol. A 15, 1446 (1997); Sugimura et al., J. Vac.Sci. Technol. A 14, 1223 (1996); Komeda et al., J. Vac. Sci. Technol. A16, 1680 (1998); Muller et al., J. Vac. Sci. Technol. B 13, 2846 (1995);and Kim and M. Lieber, Science 257, 375 (1992).

With respect to feature size, resist-based optical methods allow one toreproducibly pattern many materials, soft or solid-state, in the >100 nmline width and spatial resolution regime, while e-beam lithographymethods allow one to pattern in the 10-200 nm scale. In the case ofsoft-lithography, both e-beam lithography and optical methods rely onresist layers and the backfilling of etched areas with componentmolecules. This indirect patterning approach compromises the chemicalpurity of the structures generated and poses limitations on the types ofmaterials that can be patterned. Moreover, when more than one materialis being lithographically patterned, the optical-based pattern alignmentmethods used in these techniques limit their spatial resolution toapproximately 100 nm.

This example describes the generation of multicomponent nanostructuresby DPN, and shows that patterns of two different soft materials can begenerated by this technique with near-perfect alignment and 10 nmspatial resolution in an arbitrary manner. These results should openmany avenues to those interested in molecule-based electronics togenerate, align, and interface soft structures with each other andconventional macroscopically addressable microelectronic circuitry.

Unless otherwise specified, DPN was performed on atomically flat Au(111)substrates using a conventional instrument (Park Scientific CP AFM) andcantilevers (Park Scientific Microlever A). The atomically flat Au(111)substrates were prepared by first heating a piece of mica at 120° C. invacuum for 12 hours to remove possible water and then thermallyevaporating 30 nm of gold onto the mica surface at 220° C. in vacuum.Using atomically flat Au(111) substrates, lines 15 nm in width can bedeposited. To prevent piezo tube drift problems, a 100 μm scanner withclosed loop scan control (Park Scientific) was used for all experiments.The patterning compound was coated on the tips as described in Example 1(dipping in a solution) or by vapor deposition (for liquids andlow-melting-point solids). Vapor deposition was performed by suspendingthe silicon nitride cantilever in a 100 mL reaction vessel 1 cm abovethe patterning compound (ODT). The system was closed, heated at 60° C.for 20 min, and then allowed to cool to room temperature prior to use ofthe coated tips. SEM analysis of tips before and after coating bydipping in a solution or by vapor deposition showed that the patterningcompound uniformly coated the tips. The uniform coating on the tipsallows one to deposit the patterning compound on a substrate in acontrolled fashion, as well as to obtain high quality images.

Since DPN allows one to image nanostructures with the same tool used toform them, there was the tantalizing prospect of generatingnanostructures made of different soft materials with excellent registry.The basic idea for generating multiple patterns in registry by DPN isrelated to analogous strategies for generating multicomponent structuresby e-beam lithography that rely on alignment marks. However, the DPNmethod has two distinct advantages, in that it does not make use ofresists or optical methods for locating alignment marks. For example,using DPN, one can generate 15 nm diameter self-assembled monolayer(SAM) dots of 1,16-mercaptohexadecanoic acid (MHA) on a Au(111) facetedsubstrate (preparation same as described above for atomically flatAu(111) substrates) by holding an MHA-coated tip in contact (0.1 nN)with the Au(111) surface for ten seconds (see FIG. 9A). By increasingthe scan size, the patterned dots are then imaged with the same tip bylateral force microscopy (LFM). Since the SAM and bare gold have verydifferent wetting properties, LFM provides excellent contrast. Wilburetal., Langmuir 11, 825 (1995). Based upon the position of the firstpattern, the coordinates of additional patterns can be determined (seeFIG. 9B), allowing for precise placement of a second pattern of MHAdots. Note the uniformity of the dots (FIG. 9A) and that the maximummisalignment of the first pattern with respect to the second pattern isless than 10 nm (see upper right edge of FIG. 9C). The elapsed timebetween generating the data in FIGS. 9A and 9C was 10 minutes,demonstrating that DPN, with proper control over environment, can beused to pattern organic monolayers with a spatial and pattern alignmentresolution better than 10 nm under ambient conditions.

This method for patterning with multiple patterning compounds requiredan additional modification of the experiment described above. Since theMHA SAM dot patterns were imaged with an tip coated with a patterningcompound, it is likely that a small amount of undetectable patterningcompound was deposited while imaging. This could significantly affectsome applications of DPN, especially those dealing with electronicmeasurements on molecule-based structures. To overcome this problem,micron-scale alignment marks drawn with an MHA-coated tip (cross-hairson FIG. 10A) were used to precisely place nanostructures in a pristinearea on the Au substrate. In a typical experiment, an initial pattern of50 nm parallel lines comprised of MHA and separated by 190 nm wasprepared (see FIG. 10A). This pattern was 2 μm away from the exterioralignment marks. Note that an image of these lines was not taken toavoid contamination of the patterned area. The MHA-coated tip was thenreplaced with an ODT-coated tip. This tip was used to locate thealignment marks, and then precalculated coordinates based upon theposition of the alignment marks (FIG. 10B) were used to pattern thesubstrate with a second set of 50 nm parallel ODT SAM lines (see FIG.10C). Note that these lines were placed in interdigitated fashion andwith near-perfect registry with respect to the first set of MHA SAMlines (see FIG. 10C).

There is one unique capability of DPN referred to as “overwriting.”Overwriting involves generating one soft structure out of one type ofpatterning compound and then filling in with a second type of patterningcompound by raster scanning across the original nanostructure. As afurther proof-of concept experiment aimed at demonstrating themultiple-patterning-compound, high-registry, and overwritingcapabilities of DPN over moderately large areas, a MHA-coated tip wasused to generate three geometric structures (a triangle, a square, and apentagon) with 100 nm line widths. The tip was then changed to anODT-coated tip, and a 10 μm by 8.5 μm area that comprised the originalnanostructures was overwritten with the ODT-coated tip by rasterscanning 20 times across the substrate (contact force˜0.1 nN) (darkareas of FIG. 11). Since water was used as the transport medium in theseexperiments, and the water solubilities of the patterning compounds usedin these experiments are very low, there was essentially no detectableexchange between the molecules used to generate the nanostructure andthe ones used to overwrite on the exposed gold (see FIG. 11).

In summary, the high-resolution, multiple-patterning-compoundregistration capabilities of DPN have been demonstrated. On anatomically flat Au(111) surface, 15 nm patterns were generated with aspatial resolution better than 10 nm. Even on a rough surface such asamorphous gold, the spatial resolution was better than conventionalphotolithographic and e-beam lithographic methods for patterning softmaterials.

1. A nanolithographic method comprising: providing a substrate;providing a tip, wherein the tip is coated with a patterning compound;and contacting the coated tip with the substrate so that the patterningcompound is transported by capillary transport and anchored to thesubstrate so as to produce a pattern.
 2. The method according to claim1, wherein the patterning compound anchors to the substrate and forms apattern by chemisorption to the substrate.
 3. The method according toclaim 1, wherein the patterning compound anchors to the substrate andforms a pattern by covalent linkage to the substrate.
 4. The methodaccording to claim 1, wherein the tip is an atomic force microscope tip.5. The method according to claim 1, wherein the tip is a hollow tip. 6.The method according to claim 1, wherein the tip comprises an adhesionlayer upon which the patterning compound is coated.
 7. The methodaccording to claim 1, wherein the substrate is metal, metal oxide,semiconductor, magnetic, Si, SiO₂, or glass.
 8. The method according toclaim 1, wherein the substrate is metal.
 9. The method according toclaim 1, wherein the substrate is metal oxide.
 10. The method accordingto claim 1, wherein the substrate is a semiconductor.
 11. The methodaccording to claim 1, wherein the substrate is magnetic.
 12. The methodaccording to claim 1, wherein the substrate is Si or SiO₂.
 13. Themethod according to claim 1, wherein the substrate is glass.
 14. Themethod according to claim 1, wherein the patterning compound isrepresented by the formula R₁SH, R₁SSR₂, R₁SR₂, R₁SO₂H, (R₁)₃P, R₁NC, orArSH, wherein R₁ and R₂ are the same or different, and each has theformula X(CH₂)_(n); n is 0-30; Ar is an aryl; X is —CH₃, —CHCH₂, —COOH,—CO₂(CH₂)_(m)CH₃, —OH, —CH₂OH, ethylene glycol, hexa(ethylene glycol),—O(CH₂)_(m)CH₃, —NH₂, —NH(CH₂)_(m)NH₂, halogen, glucose, maltose,fullerene C₆₀, or a nucleic acid; and m is 0-5.
 15. The method accordingto claim 14, wherein the substrate is gold.
 16. The method according toclaim 1, wherein the patterning compound is represented by the formulaR₁SH or ArSH, wherein R₁ has the formula X(CH₂)_(n); n is 0-30; Ar is anaryl; X is —CH₃, —CHCH2, —COOH, —CO₂(CH₂)_(m)CH₃, —OH, —CH₂OH, ethyleneglycol, hexa(ethylene glycol), —O(CH₂)_(m)CH₃, —NH₂, —NH(CH₂)_(m)NH₂,halogen, glucose, maltose, fullerene C₆₀, or a nucleic acid; and m is0-5.
 17. The method according to claim 16, wherein the substrate issilver, copper, palladium, or semiconductor.
 18. The method according toclaim 1, wherein the patterning compound is an silane compound.
 19. Themethod according to claim 1, wherein the patterning compound is acarboxylic acid compound.
 20. The method according to claim 1, whereinthe patterning compound is an amino compound.
 21. The method accordingto claim 1, wherein the patterning compound is a sulfur-containingcompound.
 22. The method according to claim 1, wherein the patterningcompound is a thiol or disulfide compound.
 23. The method according toclaim 1, wherein the patterning compound is an alcohol.
 24. The methodaccording to claim 1, wherein the patterning compound is a nucleic acidcompound.
 25. The method according to claim 1, wherein the patterningcompound is an oligonucleotide.
 26. The method according to claim 1,wherein the patterning compound is a DNA compound.
 27. The methodaccording to claim 1, wherein the patterning compound is a peptide. 28.The method according to claim 1, wherein the patterning compound is aprotein.
 29. The method according to claim 1, wherein the patterningcompound is coated onto the tip by dipping the tip into a solution ofthe patterning compound.
 30. The method according to claim 29, whereinafter dipping the tip is used wet to pattern the substrate.
 31. Themethod according to claim 29, wherein after dipping the tip is driedbefore used to pattern the substrate.
 32. The method according to claim1, wherein the method is repeated with two or more different patterningcompounds being transported to the same substrate.
 33. The methodaccording to claim 1, wherein the method is carried out with a pluralityof tips with a single nanolithographic device.
 34. The method accordingto claim 1, wherein a registration system is used to align the patternrelative to an alignment mark.
 35. The method according to claim 1,wherein the method is carried out to prepare an alignment mark patternand the method is repeated to prepare a pattern relative to thealignment mark.
 36. The method according to claim 1, wherein thenanolithography is carried out in a nanoplotter format.
 37. The methodaccording to claim 36, wherein the nanoplotter format is automated usingsoftware.
 38. The method according to claim 1, wherein the pattern is adot.
 39. The method according to claim 1, wherein the pattern is a line.40. The method according to claim 1, wherein the substrate smoothness iscontrolled to improve resolution.
 41. The method according to claim 1,wherein the contacting is characterized by a tip-substrate contact timewhich is controlled to improve resolution.
 42. The method according toclaim 1, wherein the rate of transport of the patterning compound fromthe tip to the substrate is controlled to improve resolution.
 43. Themethod according to claim 1, wherein the relative humidity is controlledduring transport to improve resolution.
 44. The method according toclaim 1, wherein the transport is carried out in an isolation chamber.45. The method according to claim 44, wherein the isolation chamberprovides for measurement and control of relative humidity.
 46. Themethod according to claim 1, wherein tip sharpness is controlled toimprove resolution.
 47. The method according to claim 1, wherein thenanolithographic method is used to functionalize microscale or nanoscalestructures.
 48. The method according to claim 1, wherein thenanolithographic method is used to fabricate a microsensor, amicroreactor, a combinatorial array, a micromechanical system, amicroanalytical system, a biosurface, a biomaterial, a microelectronicssystem, a microoptical system, or a nanoelectronic device.
 49. Themethod according to claim 1, wherein the nanolithographic method is usedto functionalize a nanoscale device.
 50. The method according to claim1, wherein the pattern is a self-assembled monolayer.
 51. The methodaccording to claim 1, wherein the pattern has a lattice parameter. 52.The method according to claim 1, wherein the pattern is a line with aline width of about 15 nm to about 250 nm.
 53. The method according toclaim 1, wherein the pattern is a line with a line width of about 30 nmto about 100 nm.
 54. The method according to claim 1, wherein thepattern is a dot having width of about 12 nm to about 5 microns.
 55. Themethod according to claim 1, wherein the pattern is a dot having widthof about 460 nm to about 1.6 microns.
 56. The method according to claim1, wherein the pattern is an array.
 57. The method according to claim 1,wherein the pattern is an array or grid of dots or lines.
 58. The methodaccording to claim 1, wherein the pattern has a pattern resolution whichis about 10 nm or more.
 59. The method according to claim 1, wherein thepattern has a pattern resolution of about 10 nm or less.
 60. The methodaccording to claim 1, wherein the method is carried out to prepare afirst pattern of a first material, and carried out to prepare a secondpattern of a second material, wherein the first and second patterns arealigned with each other.
 61. The method according to claim 60, whereinthe alignment is characterized by a spatial resolution of at least 10nm.
 62. The method according to claim 1, wherein the method is used foroverwriting.
 63. The method according to claim 1, wherein the patterningcompound anchors to the substrate and forms a pattern by chemisorptionto the substrate and the tip is an atomic force microscopic tip.
 64. Themethod according to claim 63, wherein the patterning compound is apeptide or protein.
 65. The method according to claim 63, wherein thepatterning compound is a nucleic acid compound.
 66. The method accordingto claim 63, wherein the method is carried out with a plurality of tipswith a single nanolithographic device.
 67. The method according to claim63, wherein a registration system is used to align the pattern relativeto an alignment mark.
 68. The method according to claim 63, wherein therelative humidity is controlled during transport to improve resolution.69. The method according to claim 68, wherein the patterning compound isa peptide or protein.
 70. The method according to claim 68, wherein thepatterning compound is a nucleic acid.
 71. The method according to claim68, wherein the method is carried out with a plurality of tips with asingle nanolithographic device.
 72. The method according to claim 68,wherein a registration system is used to align the pattern relative toan alignment mark.
 73. The method according to claim 68, wherein thepattern is a line with a line width of about 15 nm to about 250 nm. 74.The method according to claim 68, wherein the pattern is a dot havingwidth of about 12 nm to about 5 microns.
 75. The method according toclaim 68, wherein the method is carried out to prepare a first patternof a first material, and carried out to prepare a second pattern of asecond material, wherein the first and second patterns are aligned witheach other.
 76. The method according to claim 63, wherein the pattern isa line with a line width of about 15 nm to about 250 nm.
 77. The methodaccording to claim 63, wherein the pattern is a dot having width ofabout 12 nm to about 5 microns.
 78. The method according to claim 63,wherein the pattern is a nanoarray of dots.
 79. The method according toclaim 63, wherein the method is carried out to prepare a first patternof a first material, and carried out to prepare a second pattern of asecond material, wherein the first and second patterns are aligned witheach other.
 80. The method according to claim 1, wherein a registrationsystem is used to align the pattern relative to an alignment mark. 81.The method according to claim 1, wherein the patterning compound is anantibody.
 82. The method according to claim 1, wherein the patterningcompound is an enzyme.
 83. The method according to claim 1, wherein thepatterning compound is an RNA.
 84. The method according to claim 1,wherein the patterning compound is a ligand.
 85. The method according toclaim 1, wherein the patterning compound is an antigen.
 86. The methodaccording to claim 1, wherein the patterning compound is an enzymesubstrate.
 87. The method according to claim 1, wherein the patterningcompound is a receptor.
 88. The method according to claim 1, wherein thetip is a hollow tip serving as a reservoir for a patterning compound.89. The method according to claim 1, wherein the tip is a hollow tipserving as a reservoir for a protein patterning compound.
 90. The methodaccording to claim 1, wherein the tip is a hollow tip serving as areservoir for an antibody patterning compound.
 91. A direct-writenanolithographic method comprising: providing a substrate; providing ascanning probe microscope tip comprising a patterning ink on the tipsurface; and transporting the patterning ink from the tip to thesubstrate by capillary transport so as to produce a nanolithographicpattern.
 92. The method according to claim 91, wherein the patterningink is selected for chemisorption to the substrate.
 93. The methodaccording to claim 91, wherein the patterning ink is selected forcovalent linkage to the substrate.
 94. The method according to claim 91,wherein the tip is an atomic force microscope tip.
 95. The methodaccording to claim 91, wherein the tip is a hollow tip.
 96. The methodaccording to claim 91, wherein the tip comprises an adhesion layer uponwhich the patterning ink is coated.
 97. The method according to claim91, wherein the substrate is metal, metal oxide, semiconductor,magnetic, Si, SiO₂, or glass.
 98. The method according to claim 91,wherein the substrate is metal.
 99. The method according to claim 91,wherein the substrate is metal oxide.
 100. The method according to claim91, wherein the substrate is a semiconductor.
 101. The method accordingto claim 91, wherein the substrate is magnetic.
 102. The methodaccording to claim 91, wherein the substrate is Si or SiO₂.
 103. Themethod according to claim 91, wherein the substrate is glass.
 104. Themethod according to claim 91, wherein the patterning comprises acompound represented by the formula R₁SH, R₁SSR₂, R₁SR₂, R₁SO₂H, (R₁)₃P,R₁NC, or ArSH, wherein R₁ and R₂ are the same or different, and each hasthe formula X(CH₂)_(n); n is 0-30; Ar is an aryl; X is —CH₃, —CHCH₂,—COOH, —CO₂(CH₂)_(m)CH₃, —OH, —CH₂OH, ethylene glycol, hexa(ethyleneglycol), —O(CH₂)_(m)CH₃, —NH₂, —NH(CH₂)_(m)NH₂, halogen, glucose,maltose, fullerene C₆₀, or a nucleic acid; and m is 0-5.
 105. The methodaccording to claim 104, wherein the substrate is gold.
 106. The methodaccording to claim 91, wherein the patterning ink comprises a compoundrepresented by the formula R₁SH or ArSH, wherein R₁ has the formulaX(CH₂)_(n); n is 0-30; Ar is an aryl; X is —CH₃, —CHCH₂, COOH,—CO₂(CH₂)_(m)CH₃, —OH, —CH₂OH, ethylene glycol, hexa(ethylene glycol),—O(CH₂)_(m)CH₃, —NH₂, —NH(CH₂)_(m)NH₂, halogen, glucose, maltose,fullerene C₆₀, or a nucleic acid; and m is 0-5.
 107. The methodaccording to claim 106, wherein the substrate is silver, copper,palladium, or semiconductor.
 108. The method according to claim 91,wherein the patterning ink comprises a silane compound.
 109. The methodaccording to claim 91, wherein the patterning ink comprises a carboxylicacid.
 110. The method according to claim 91, wherein the patterning inkcomprises an amino compound.
 111. The method according to claim 91,wherein the patterning ink comprises a sulfur-containing compound. 112.The method according to claim 91, wherein the patterning ink comprises athiol or disulfide compound.
 113. The method according to claim 91,wherein the patterning ink comprises an alcohol.
 114. The methodaccording to claim 91, wherein the patterning ink comprises a nucleicacid compound.
 115. The method according to claim 91, wherein thepatterning ink comprises an oligonucleotide.
 116. The method accordingto claim 91, wherein the patterning ink comprises a DNA compound. 117.The method according to claim 91, wherein the patterning ink comprises apeptide.
 118. The method according to claim 91, wherein the patterningink comprises a protein.
 119. The method according to claim 91, whereinthe patterning ink is coated onto the tip by dipping the tip into asolution of a patterning compound.
 120. The method according to claim91, wherein after dipping the tip is used wet to pattern the substrate.121. The method according to claim 91, wherein after dipping the tip isdried before used to pattern the substrate.
 122. The method according toclaim 91, wherein the method is repeated with two or more differentpatterning inks being transported to the same substrate.
 123. The methodaccording to claim 91, wherein the method is carried out with aplurality of tips with a single nanolithographic device.
 124. The methodaccording to claim 91, wherein the method is carried out to prepare analignment mark pattern and the method is repeated to prepare a patternrelative to the alignment mark.
 125. The method according to claim 91,wherein the nanolithography is carried out in a nanoplotter format. 126.The method according to claim 125, wherein the nanoplotter format isautomated using software.
 127. The method according to claim 91, whereinthe pattern is a dot.
 128. The method according to claim 91, wherein thepattern is a line.
 129. The method according to claim 91, wherein thesubstrate smoothness is controlled.
 130. The method according to claim91, wherein the contacting is characterized by a tip-substrate contacttime which is controlled.
 131. The method according to claim 91, whereinthe rate of transport of the patterning ink from the tip to thesubstrate is controlled.
 132. The method according to claim 91, whereinthe relative humidity is controlled.
 133. The method according to claim91, wherein the transport is carried out in an isolation chamber. 134.The method according to claim 133, wherein the isolation chamberprovides for control of relative humidity.
 135. The method according toclaim 91, wherein tip sharpness is controlled.
 136. The method accordingto claim 91, wherein the nanolithographic method is used tofunctionalize microscale or nanoscale structures.
 137. The methodaccording to claim 91, wherein the nanolithographic method is used tofabricate a microsensor, a microreactor, a combinatorial array, amicromechanical system, a microanalytical system, a biosurface, abiomaterial, a microelectronics system, a microoptical system, or ananoelectronic device.
 138. The method according to claim 91, whereinthe nanolithographic method is used to functionalize a nanoscale device.139. The method according to claim 91, wherein the pattern is aself-assembled monolayer.
 140. The method according to claim 91, whereinthe pattern has a lattice parameter.
 141. The method according to claim91, wherein the pattern is a line with a line width of about 15 nm toabout 250 nm.
 142. The method according to claim 91, wherein the patternis a line with a line width of about 30 nm to about 100 nm.
 143. Themethod according to claim 91, wherein the pattern is a dot having widthof about 12 nm to about 5 microns.
 144. The method according to claim91, wherein the pattern is a dot having width of about 460 nm to about1.6 microns.
 145. The method according to claim 91, wherein the patternis an array.
 146. The method according to claim 91, wherein the patternis an array or grid of dots or lines.
 147. The method according to claim91, wherein the pattern has a pattern resolution which is about 10 nm ormore.
 148. The method according to claim 91, wherein the pattern has apattern resolution of about 10 nm or less.
 149. The method according toclaim 91, wherein the method is carried out to prepare a first patternof a first material, and carried out to prepare a second pattern of asecond material, wherein the first and second patterns are aligned witheach other.
 150. The method according to claim 91, wherein the alignmentis characterized by a spatial resolution of at least 10 nm.
 151. Themethod according to claim 91, wherein the method is used foroverwriting.
 152. The method according to claim 91, wherein thepatterning ink anchors to the substrate and forms a nanolithographicpattern by chemisorption to the substrate and the tip is an atomic forcemicroscopic tip.
 153. The method according to claim 152, wherein thepatterning ink comprises a peptide or protein.
 154. The method accordingto claim 152, wherein the patterning ink comprises a nucleic acidcompound.
 155. The method according to claim 152, wherein the method iscarried out with a plurality of tips with a single nanolithographicdevice.
 156. The method according to claim 152, wherein a registrationsystem is used to align the pattern relative to an alignment mark. 157.The method according to claim 152, wherein the relative humidity iscontrolled during transport.
 158. The method according to claim 157,wherein the patterning ink comprises a peptide or protein.
 159. Themethod according to claim 157, wherein the patterning ink comprises anucleic acid.
 160. The method according to claim 157, wherein the methodis carried out with a plurality of tips with a single nanolithographicdevice.
 161. The method according to claim 157, wherein a registrationsystem is used to align the pattern relative to an alignment mark. 162.The method according to claim 157, wherein the method is carried out toprepare a first pattern of a first material, and carried out to preparea second pattern of a second material, wherein the first and secondpatterns are aligned with each other.
 163. The method according to claim152, wherein the pattern is a line with a line width of about 15 nm toabout 250 nm.
 164. The method according to claim 152, wherein thepattern is a dot having width of about 12 nm to about 5 microns. 165.The method according to claim 152, wherein the method is carried out toprepare a first pattern of a first material, and carried out to preparea second pattern of a second material, wherein the first and secondpatterns are aligned with each other.
 166. The method according to claim91, wherein the pattern is a nanoarray.
 167. The method according toclaim 91, wherein the pattern is a nanoarray of dots.
 168. The methodaccording to claim 91, wherein the tip is modified for adhesion of thepatterning ink.
 169. The method according to claim 91, wherein thesubstrate and patterning ink are selected for chemisorption or covalentbonding to each other upon transport of ink to substrate.
 170. Adirect-write nanolithographic method consisting essentially ofdepositing a plurality of patterns on a substrate by capillary transportof an ink from a tip to a solid substrate with sub-micron resolution.171. The method according to claim 170, wherein the tip is an atomicforce microscopic tip.
 172. The method according to claim 170, whereinthe tip is a hollow tip.
 173. The method according to claim 170, whereinthe resolution is 100 nm or less.
 174. The method according to claim170, wherein the resolution is 10 nm or better.
 175. The methodaccording to claim 174, wherein exterior alignment marks are used. 176.A method of nanolithography comprising: providing a substrate; providinga tip with a patterning compound thereon; contacting the coated tip withthe substrate so that the compound is applied to the substrate bycapillary transport so as to produce a first desired pattern; andcontacting the coated tip with the substrate so that a compound isapplied to the substrate by capillary transport so as to produce asecond desired pattern; wherein the spatial resolution between the firstand second patterns is 10 nm or better.
 177. The method according toclaim 176, wherein the tip is a scanning probe microscopic tip.
 178. Themethod according to claim 176, wherein the tip is a hollow tip.
 179. Themethod according to claim 176, wherein the contacting is carried out inan isolation chamber.
 180. The method according to claim 176, whereinthe first and second patterns are chemisorbed or covalently bonded tothe substrate.